Conductive polymer PEDOT:PSS back contact for CdTe solar cell
Identifieur interne : 003286 ( Main/Repository ); précédent : 003285; suivant : 003287Conductive polymer PEDOT:PSS back contact for CdTe solar cell
Auteurs : RBID : Pascal:11-0433342Descripteurs français
- Pascal (Inist)
- Semiconducteur II-VI, Cellule solaire, Verre, Vide poussé, Evaporation sous vide, Technique vide, Bicouche, Structure lamellaire, Recuit, Chlorure de cadmium, Couche mince, Thiophène polymère, Thiophène dérivé polymère, Dopage, Polymère conducteur, Tellurure de cadmium, Oxyde d'étain, Oxyde d'indium, Sulfure de cadmium, Styrène polymère, Acide sulfonique, Diffraction RX, Microscopie électronique balayage, CdTe, CdS, CdCl2, 8105D, 8460J, 6855J, 8105H.
- Wicri :
English descriptors
- KwdEn :
- Annealing, Bilayers, Cadmium chloride, Cadmium sulfide, Cadmium tellurides, Conducting polymers, Doping, Glass, High vacuum, II-VI semiconductors, Indium oxide, Lamellar structure, Polystyrene, Scanning electron microscopy, Solar cells, Sulfonic acids, Thin films, Thiophene derivative polymer, Thiophene polymer, Tin oxide, Vacuum evaporation, Vacuum techniques, XRD.
Abstract
Two types of superstrate glass/ITO/CdS/CdTe PV structures were prepared by high vacuum evaporation technique with (i) activation of CdS layer and CdS/CdTe bi-layer structure step-by-step and (ii) activation of CdS/CdTe bi-layer structure. The activation was performed by annealing the structures with CdCl2 in air at 400 °C for 15 min. Main conditions for CdS and CdTe thin films deposition and following treatment were selected from the literature data with the purpose to prepare and compare complete CdTe solar cells with standard p+CuxTe back contact and conductive polymer poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonic acid (PEDOT:PSS) back contact. Obtained layers and structures were characterized using the XRD, SEM and I-V methods. Both the methods of activation treatment give comparable results from the point of view PV properties of complete solar cells. It was found that highly conductive PEDOT:PSS intermediate layer can significantly improve the back contact characteristics of CdTe. However these hybrid structures need to be further optimized to compete successfully with conventional inorganic back contacts in complete CdTe solar cells.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Conductive polymer PEDOT:PSS back contact for CdTe solar cell</title><author><name sortKey="Jarkov, A" uniqKey="Jarkov A">A. Jarkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Bereznev, S" uniqKey="Bereznev S">S. Bereznev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Laes, K" uniqKey="Laes K">K. Laes</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Volobujeva, O" uniqKey="Volobujeva O">O. Volobujeva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Traksmaa, R" uniqKey="Traksmaa R">R. Traksmaa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tallinn University of Technology, Materials Research Center, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>5 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Opik, A" uniqKey="Opik A">A. Öpik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Mellikov, E" uniqKey="Mellikov E">E. Mellikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0433342</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0433342 INIST</idno><idno type="RBID">Pascal:11-0433342</idno><idno type="wicri:Area/Main/Corpus">002810</idno><idno type="wicri:Area/Main/Repository">003286</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Bilayers</term><term>Cadmium chloride</term><term>Cadmium sulfide</term><term>Cadmium tellurides</term><term>Conducting polymers</term><term>Doping</term><term>Glass</term><term>High vacuum</term><term>II-VI semiconductors</term><term>Indium oxide</term><term>Lamellar structure</term><term>Polystyrene</term><term>Scanning electron microscopy</term><term>Solar cells</term><term>Sulfonic acids</term><term>Thin films</term><term>Thiophene derivative polymer</term><term>Thiophene polymer</term><term>Tin oxide</term><term>Vacuum evaporation</term><term>Vacuum techniques</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur II-VI</term><term>Cellule solaire</term><term>Verre</term><term>Vide poussé</term><term>Evaporation sous vide</term><term>Technique vide</term><term>Bicouche</term><term>Structure lamellaire</term><term>Recuit</term><term>Chlorure de cadmium</term><term>Couche mince</term><term>Thiophène polymère</term><term>Thiophène dérivé polymère</term><term>Dopage</term><term>Polymère conducteur</term><term>Tellurure de cadmium</term><term>Oxyde d'étain</term><term>Oxyde d'indium</term><term>Sulfure de cadmium</term><term>Styrène polymère</term><term>Acide sulfonique</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>CdTe</term><term>CdS</term><term>CdCl2</term><term>8105D</term><term>8460J</term><term>6855J</term><term>8105H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Two types of superstrate glass/ITO/CdS/CdTe PV structures were prepared by high vacuum evaporation technique with (i) activation of CdS layer and CdS/CdTe bi-layer structure step-by-step and (ii) activation of CdS/CdTe bi-layer structure. The activation was performed by annealing the structures with CdCl<sub>2</sub> in air at 400 °C for 15 min. Main conditions for CdS and CdTe thin films deposition and following treatment were selected from the literature data with the purpose to prepare and compare complete CdTe solar cells with standard p+Cu<sub>x</sub>Te back contact and conductive polymer poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonic acid (PEDOT:PSS) back contact. Obtained layers and structures were characterized using the XRD, SEM and I-V methods. Both the methods of activation treatment give comparable results from the point of view PV properties of complete solar cells. It was found that highly conductive PEDOT:PSS intermediate layer can significantly improve the back contact characteristics of CdTe. However these hybrid structures need to be further optimized to compete successfully with conventional inorganic back contacts in complete CdTe solar cells.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>519</s2></fA05><fA06><s2>21</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Conductive polymer PEDOT:PSS back contact for CdTe solar cell</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2010 Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials Strasbourg, France</s1></fA09><fA11 i1="01" i2="1"><s1>JARKOV (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BEREZNEV (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>LAES (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>VOLOBUJEVA (O.)</s1></fA11><fA11 i1="05" i2="1"><s1>TRAKSMAA (R.)</s1></fA11><fA11 i1="06" i2="1"><s1>ÖPIK (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>MELLIKOV (E.)</s1></fA11><fA12 i1="01" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>GUILLEMOLES (Jean François)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>YAMADA (Akira)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>ABOU-RAS (Daniel)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Tallinn University of Technology, Materials Research Center, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>5 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>the European Materials Research Society (E-MRS</s1><s3>EUR</s3><s9>org-cong.</s9></fA18><fA20><s1>7449-7452</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000509101330750</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0433342</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Two types of superstrate glass/ITO/CdS/CdTe PV structures were prepared by high vacuum evaporation technique with (i) activation of CdS layer and CdS/CdTe bi-layer structure step-by-step and (ii) activation of CdS/CdTe bi-layer structure. The activation was performed by annealing the structures with CdCl<sub>2</sub> in air at 400 °C for 15 min. Main conditions for CdS and CdTe thin films deposition and following treatment were selected from the literature data with the purpose to prepare and compare complete CdTe solar cells with standard p+Cu<sub>x</sub>Te back contact and conductive polymer poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonic acid (PEDOT:PSS) back contact. Obtained layers and structures were characterized using the XRD, SEM and I-V methods. Both the methods of activation treatment give comparable results from the point of view PV properties of complete solar cells. It was found that highly conductive PEDOT:PSS intermediate layer can significantly improve the back contact characteristics of CdTe. However these hybrid structures need to be further optimized to compete successfully with conventional inorganic back contacts in complete CdTe solar cells.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>II-VI semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Verre</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Glass</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Vide poussé</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>High vacuum</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Evaporation sous vide</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" 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